Shenzhen Advanced Institute and other research and development of a new flexible ferroelectric field effect transistor

[ Instrument Network Instrument Development ] Recently, the Center for Nano-Regulation and Biomechanics of the Institute of Advanced Technology, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences has made new progress in the field of flexible ferroelectric field effect transistors. The related results are Highly robust flexible ferroelectric field effect transistors at at high temperature. With low-power consumption ("Low-Power, High-Temperature, High-Performance Flexible Ferroelectric Field Effect Transistor") was published in the journal Advanced Science Materials. Ren Chuanlai, a Ph.D. student at the Center for Nano-Regulation Research, Shenzhen Advanced Institute, is the first author of the paper. Dr. Zhong Gaokuo, the director of the Nano-regulation Research Center of Shenzhen Advanced Institute, is the co-first author and co-author of the paper. Professor Zhong Xiangli, School of Materials Science and Engineering, Xiangtan University Li Jiangyu, a researcher at the Nano Regulatory Research Center of Shenzhen Advanced Institute, is the co-author.

Ferroelectric field effect transistors (FeFETs) have a variety of functions and tunable characteristics, and have broad application prospects in low-power sensors, non-volatile data storage, and emerging artificial synapses. With the rapid development of society, people have higher requirements for flexible wearable devices, and put forward higher requirements for the flexibility of FeFET. However, most of the current flexible FeFETs are based on organic ferroelectric materials, which have the disadvantages of low polarization, poor thermal stability and high energy consumption. Based on this, the oxide functional materials research team developed an all-inorganic flexible FeFET based on a muscovite substrate and an epitaxial Pb(Zr0.1Ti0.9)O3/ZnO heterojunction. This FeFET not only maintains the advantages of inorganic ferroelectric field effect transistors such as low operating voltage (±6 V), low power consumption, high switching ratio, and good retention, but also has the characteristics of flexible bending resistance, repeated bending and high temperature. Good FeFET electrical properties are maintained under conditions. This work demonstrates the enormous potential of mica as a general-purpose platform, providing a new choice for flexible FeFET applications in the next generation of low-power, high-temperature flexible electronic products.

The above work has been funded by the National Key Research and Development Program Nanotechnology Key Project and the National Natural Science Foundation.